THE OHMI BEST PAPER AWARD
A Novel Hybrid Power Module with Dual Side-Gate HiGT and SiC-SBD
Abstract – In this paper, a novel hybrid power module using a new combination of dual side-gate HiGTs (high-conductivity IGBT) and SiC-SBDs is proposed. This combination achieves drastic switching loss reductions at a turn-off loss of −43%, a turn-on loss of −71%, and a reverse recovery loss of −98% compared with a conventional combination of trench gate HiGTs and U-SFDs (ultra soft & fast recovery diode). As a result, the proposed DuSH module (dual side-gate HiGT hybrid module) has an extremely low inverter loss of −50%, similar to SiC-MOSFETs.
Yujiro Takeuchi received the B.S. and M.S. degrees in maritime science from Kobe University, Hyogo-ken, Japan in 2010 and 2012. He joined Hitachi, Ltd., Ibaraki-ken, Japan, in 2012, where he has been engaged in research on power semiconductor devices.
Tomoyuki Miyoshi received the B.S., M.S., and Ph.D. in Tohoku University, Miyagi, Japan, in 2005, 2007, and 2015. In 2007, he joined Hitachi, Ltd., Japan. He is currently engaged in research and development of power device technologies.
Tomoyasu Furukawa received the B.S. and M.S. degrees in Hiroshima University in 2000 and 2002. He joined Hitachi, Ltd, Japan, in 2002. He is currently engaged in research and development of power device technologies.
Masaki Shiraishi received the B.S. and M.S. degrees in Tokyo Institute of Technology in 1996 and 1998. He joined Hitachi, Ltd, Japan, in 1998. He has been engaged in research and development of power semiconductor devices.
Mutsuhiro Mori received the B.E., M.E. and Ph. D. degrees in science and engineering from Waseda University, Tokyo, Japan. Since 1979, he has been with the Hitachi Research Laboratory, Hitachi, Ltd. He has been engaged in the research and development of optimal energy saving control systems with IT and power semiconductor devices, such as the light-triggered thyristors, GaAs power static induction transistors (SIT), one chip inverter ICs, high-voltage driver ICs, soft and fast recovery diodes (SFD), and high-conductivity insulated gate bipolar transistors (HiGT). He is a member of the Institute of Electrical Engineers of Japan (IEEJ) and a senior member of the Institute of Electrical and Electronics Engineers (IEEE).